Central Semiconductor Corp. Bipolar Transistors - BJT BCY58-VIII

The BCY58-VIII is an NPN silicon epitaxial planar transistor in a TO-18 metal case, designed for low noise amplification and switching applications. It has a collector-base voltage rating of 32 V, a collector-emitter voltage rating of 32 V, and an emitter-base voltage rating of 7.0 V. The continuous collector current is 100 mA, with a power dissipation of 340 mW at 25°C and 1.0 W at a case temperature of 25°C. The transistor features a minimum DC current gain (hFE) of 180 at VCE=5.0 V and IC=2.0 mA, and 120 at VCE=1.0 V and IC=10 mA, with a transition frequency of 150 MHz. The package defines pin 1 as emitter, pin 2 as base, and pin 3 as collector.