Central Semiconductor Corp. Bipolar Transistors - BJT BCY58-IX

The BCY58-IX is an NPN silicon epitaxial planar transistor in a TO-18 metal case, designed for low noise amplifier and switching applications. It has a collector-base voltage rating of 32 V, a collector-emitter voltage of 32 V, and an emitter-base voltage of 7.0 V. The device supports a continuous collector current of 100 mA and a power dissipation of 340 mW at 25°C, increasing to 1.0 W with a case temperature of 25°C. The minimum hFE is 250 at VCE=5.0V and IC=2.0mA, and 160 at VCE=1.0V and IC=10mA, with a maximum hFE of 460 and 630 respectively. The transition frequency is 150 MHz, and the collector-base capacitance is 5.0 pF at 10 V. The operating and storage junction temperature range is -65°C to +200°C. The transistor meets standard thermal resistance values of 450°C/W (JA) and 150°C/W (JC).