Central Semiconductor Corp. Bipolar Transistors - BJT BCX53-16 TR

Description
Bipolar Transistors - BJT 100Vcbo 80Vceo 5.0Vebo 1.0A 1.3W
Description
Bipolar Transistors - BJT 100Vcbo 80Vceo 5.0Vebo 1.0A 1.3W
Datasheet
Datasheet Summary
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The BCX53-16 TR is a PNP silicon transistor in an SOT-89 surface mount package, rated for a collector-base voltage of 100 V, collector-emitter voltage of 80 V, and emitter-base voltage of 5.0 V. It supports a continuous collector current of 1.0 A and a power dissipation of 1.3 W. The device has a thermal resistance of 96 °C/W and operates from -65 °C to +150 °C. The hFE gain ranges from 100 to 250 at VCE=2.0 V and IC=150 mA. It meets RoHS standards and is designed for high-current general purpose amplifier applications.

Datasheet Summary
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The BCX53-16 TR is a PNP silicon transistor in an SOT-89 surface mount package, rated for a collector-base voltage of 100 V, collector-emitter voltage of 80 V, and emitter-base voltage of 5.0 V. It supports a continuous collector current of 1.0 A and a power dissipation of 1.3 W. The device has a thermal resistance of 96 °C/W and operates from -65 °C to +150 °C. The hFE gain ranges from 100 to 250 at VCE=2.0 V and IC=150 mA. It meets RoHS standards and is designed for high-current general purpose amplifier applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX53-16 TR
Bipolar Transistors - BJT BCX53-16 TR
Bipolar Transistors - BJT 100Vcbo 80Vceo 5.0Vebo 1.0A 1.3W

Bipolar Transistors - BJT 100Vcbo 80Vceo 5.0Vebo 1.0A 1.3W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX53-16 TR
Product Name Bipolar Transistors - BJT
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