The BC858B TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general-purpose switching and amplifier applications. It shares the series ratings: collector-base voltage of 30 V, collector-emitter voltage of 30 V, emitter-base voltage of 5.0 V, continuous collector current of 100 mA, peak collector current of 200 mA, and power dissipation of 350 mW. The device operates from -65°C to +150°C with a thermal resistance of 357 °C/W. Current gain (hFE) ranges from 420 to 800 at VCE=5.0 V and IC=2.0 mA. The part meets RoHS compliance as implied by standard packaging practices and is marked with code 3K.
Bipolar Transistors - BJT PNP 30Vebo 30Vceo 5.0Vebo 100mA 350mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC858B TR |
| Product Name | Bipolar Transistors - BJT |
