Central Semiconductor Corp. Bipolar Transistors - BJT BC857C TR

Description
Bipolar Transistors - BJT PNP 50Vcbo Trans 45Vce 5.0Vebo 100mA
Description
Bipolar Transistors - BJT PNP 50Vcbo Trans 45Vce 5.0Vebo 100mA
Datasheet
Datasheet Summary
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The BC857C TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general-purpose switching and amplifier applications. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 45 V, and an emitter-base voltage of 5.0 V. The continuous collector current is 100 mA, with a peak collector current of 200 mA and power dissipation of 350 mW. The operating and storage junction temperature range is from -65°C to +150°C. The current gain (hFE) ranges from 420 to 800 at VCE=5.0 V and IC=2.0 mA. The device meets RoHS standards and is marked with code 3G.

Datasheet Summary
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The BC857C TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general-purpose switching and amplifier applications. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 45 V, and an emitter-base voltage of 5.0 V. The continuous collector current is 100 mA, with a peak collector current of 200 mA and power dissipation of 350 mW. The operating and storage junction temperature range is from -65°C to +150°C. The current gain (hFE) ranges from 420 to 800 at VCE=5.0 V and IC=2.0 mA. The device meets RoHS standards and is marked with code 3G.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC857C TR
Bipolar Transistors - BJT BC857C TR
Bipolar Transistors - BJT PNP 50Vcbo Trans 45Vce 5.0Vebo 100mA

Bipolar Transistors - BJT PNP 50Vcbo Trans 45Vce 5.0Vebo 100mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC857C TR
Product Name Bipolar Transistors - BJT
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