Central Semiconductor Corp. Single Bipolar Transistors BC857C TR TIN/LEAD

The BC857C is a silicon PNP transistor in an SOT-23 surface mount package, designed for general purpose switching and amplifier applications. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 100 mA, and a power dissipation of 330 mW. The device features a minimum hFE of 420 at VCE=5.0 V and IC=2.0 mA. Operating and storage junction temperatures range from -55°C to +150°C. The package complies with RoHS standards and is available in a reverse lead configuration with an "R" suffix. Thermal resistance is 375 °C/W.