Central Semiconductor Corp. Bipolar Transistors - BJT BC857BT

The BC857BT is a PNP silicon transistor in an SOT-523 surface mount package, designed for general purpose switching and amplification. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 100 mA, and a power dissipation of 250 mW. The junction operating and storage temperature range is -65 °C to +150 °C. Its DC current gain (hFE) ranges from 220 to 475 at VCE=5.0 V and IC=2.0 mA. The device meets RoHS standards and is marked with the code GT9.