Central Semiconductor Corp. Bipolar Transistors - BJT BC857BR TR

Description
Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW
Description
Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW
Datasheet
Datasheet Summary
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The BC857BR TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general purpose switching and amplifier applications. It has a collector-emitter voltage rating of 45 V, a collector-base voltage of 50 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 100 mA. Maximum power dissipation is 350 mW, with an operating and storage junction temperature range of -65° C to +150° C. The device meets the SOT-23 mechanical outline with reverse lead configuration, as indicated by the "R" suffix. It is part of the BC857 series, confirmed by its marking code 3K and adherence to the series' electrical characteristics.

Datasheet Summary
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The BC857BR TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general purpose switching and amplifier applications. It has a collector-emitter voltage rating of 45 V, a collector-base voltage of 50 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 100 mA. Maximum power dissipation is 350 mW, with an operating and storage junction temperature range of -65° C to +150° C. The device meets the SOT-23 mechanical outline with reverse lead configuration, as indicated by the "R" suffix. It is part of the BC857 series, confirmed by its marking code 3K and adherence to the series' electrical characteristics.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC857BR TR
Bipolar Transistors - BJT BC857BR TR
Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW

Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC857BR TR
Product Name Bipolar Transistors - BJT
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