Central Semiconductor Corp. Bipolar Transistors - BJT BC856B TR

Description
Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 350mW
Description
Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 350mW
Datasheet
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The BC856B TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 65 V, an emitter-base voltage of 5.0 V, a continuous collector current of 100 mA, and a power dissipation of 350 mW. The device operates within a junction temperature range of -65 to +150 °C and has a thermal resistance of 357 °C/W. The minimum current gain (hFE) at 2.0 mA collector current is 220, with a maximum of 475. The package is SOT-23, and the marking code is 3B.

Datasheet Summary
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The BC856B TR is a PNP silicon transistor in an SOT-23 surface mount package, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 65 V, an emitter-base voltage of 5.0 V, a continuous collector current of 100 mA, and a power dissipation of 350 mW. The device operates within a junction temperature range of -65 to +150 °C and has a thermal resistance of 357 °C/W. The minimum current gain (hFE) at 2.0 mA collector current is 220, with a maximum of 475. The package is SOT-23, and the marking code is 3B.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC856B TR
Bipolar Transistors - BJT BC856B TR
Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 350mW

Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 350mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC856B TR
Product Name Bipolar Transistors - BJT
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