The BC856AT TR is a PNP silicon transistor in an SOT-523 surface mount package, designed for general purpose switching and amplifier applications. It features a collector-base voltage rating of 80 V, a collector-emitter voltage of 65 V, and an emitter-base voltage of 5.0 V. The continuous collector current is 100 mA, with a power dissipation of 250 mW. The device operates within a junction temperature range of -65 to +150°C and has a thermal resistance of 500°C/W. Current gain (hFE) ranges from 125 to 250 at VCE=5.0 V and IC=2.0 mA. The transistor complies with RoHS standards.
Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 250mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC856AT TR |
| Product Name | Bipolar Transistors - BJT |
