Central Semiconductor Corp. Bipolar Transistors - BJT BC546B

The BC546B is a silicon NPN small signal transistor for general purpose amplifier applications, packaged in a TO-92-18R case. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 65 V, and a continuous collector current of 100 mA. Power dissipation is rated at 500 mW, with an operating and storage junction temperature range of -65 to +150 °C. The current gain (hFE) at VCE=5.0 V and IC=2.0 mA ranges from 110 to 220. The transition frequency (fT) is 300 MHz at IC=10 mA and VCE=5.0 V. Thermal resistance from junction to ambient is 250 °C/W.