Central Semiconductor Corp. Bipolar Transistors - BJT BC337

The BC337 is an NPN silicon transistor designed for general-purpose amplifier and switching applications, housed in a TO-92 case. It has a maximum collector-emitter voltage of 45 V, a collector current rating of 800 mA, and a power dissipation of 625 mW. The storage and operating junction temperature range is -65 to +150 °C. The thermal resistance from junction to ambient is 200 °C/W. The DC current gain (hFE) at VCE=1.0 V and IC=100 mA ranges from 100 to 630. The transistor has a transition frequency of 210 MHz and an output capacitance of 15 pF. It meets RoHS compliance.