Central Semiconductor Corp. Bipolar Transistors - BJT BC337

Description
Bipolar Transistors - BJT NPN SS Aud Amp
Description
Bipolar Transistors - BJT NPN SS Aud Amp
Datasheet
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The BC337 is an NPN silicon transistor designed for general-purpose amplifier and switching applications, housed in a TO-92 case. It has a maximum collector-emitter voltage of 45 V, a collector current rating of 800 mA, and a power dissipation of 625 mW. The storage and operating junction temperature range is -65 to +150 °C. The thermal resistance from junction to ambient is 200 °C/W. The DC current gain (hFE) at VCE=1.0 V and IC=100 mA ranges from 100 to 630. The transistor has a transition frequency of 210 MHz and an output capacitance of 15 pF. It meets RoHS compliance.

Datasheet Summary
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The BC337 is an NPN silicon transistor designed for general-purpose amplifier and switching applications, housed in a TO-92 case. It has a maximum collector-emitter voltage of 45 V, a collector current rating of 800 mA, and a power dissipation of 625 mW. The storage and operating junction temperature range is -65 to +150 °C. The thermal resistance from junction to ambient is 200 °C/W. The DC current gain (hFE) at VCE=1.0 V and IC=100 mA ranges from 100 to 630. The transistor has a transition frequency of 210 MHz and an output capacitance of 15 pF. It meets RoHS compliance.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC337
Bipolar Transistors - BJT BC337
Bipolar Transistors - BJT NPN SS Aud Amp

Bipolar Transistors - BJT NPN SS Aud Amp

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC337
Product Name Bipolar Transistors - BJT
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