Central Semiconductor Corp. Bipolar Transistors - BJT BC337-40

The BC337-40 is an NPN silicon bipolar transistor in a TO-92 package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 45 V, a collector-base voltage of 50 V, and a continuous collector current of 800 mA with a power dissipation of 625 mW. The device features a minimum hFE of 250 at VCE=1.0 V and IC=100 mA, with a maximum of 630. The transition frequency is 210 MHz, and the collector-emitter saturation voltage is 0.7 V at IC=500 mA and IB=50 mA. The operating and storage junction temperature range is -65 to +150 °C. The thermal resistance from junction to ambient is 200 °C/W.