Central Semiconductor Corp. Bipolar Transistors - BJT BC337-25

Description
Bipolar Transistors - BJT NPN 50Vcbo 45 Vceo 800mA 625mW Trans
Description
Bipolar Transistors - BJT NPN 50Vcbo 45 Vceo 800mA 625mW Trans
Datasheet
Datasheet Summary
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The BC337-25 is an NPN silicon transistor in a TO-92 package for general-purpose amplifier and switching applications. It has a maximum collector-emitter voltage of 45 V, a continuous collector current of 800 mA, and a power dissipation of 625 mW. The current gain (hFE) ranges from 160 to 400 at VCE=1.0 V and IC=100 mA. The collector-base voltage is 50 V, emitter-base voltage is 5.0 V, and the operating and storage junction temperature range is -65 to +150 °C. Thermal resistance from junction to ambient is 200 °C/W. The device meets RoHS standards.

Datasheet Summary
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The BC337-25 is an NPN silicon transistor in a TO-92 package for general-purpose amplifier and switching applications. It has a maximum collector-emitter voltage of 45 V, a continuous collector current of 800 mA, and a power dissipation of 625 mW. The current gain (hFE) ranges from 160 to 400 at VCE=1.0 V and IC=100 mA. The collector-base voltage is 50 V, emitter-base voltage is 5.0 V, and the operating and storage junction temperature range is -65 to +150 °C. Thermal resistance from junction to ambient is 200 °C/W. The device meets RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC337-25
Bipolar Transistors - BJT BC337-25
Bipolar Transistors - BJT NPN 50Vcbo 45 Vceo 800mA 625mW Trans

Bipolar Transistors - BJT NPN 50Vcbo 45 Vceo 800mA 625mW Trans

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC337-25
Product Name Bipolar Transistors - BJT
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