Central Semiconductor Corp. Bipolar Transistors - BJT BC337-25 TRE

Description
Bipolar Transistors - BJT 50Vcbo 45Vceo NPN 5.0Vebo 800mA 625mW
Description
Bipolar Transistors - BJT 50Vcbo 45Vceo NPN 5.0Vebo 800mA 625mW
Datasheet
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The BC337-25 TRE is an NPN silicon transistor in a TO-92 package for general-purpose amplifier and switching applications, with a continuous collector current of 800 mA, collector-emitter voltage of 45 V, collector-base voltage of 50 V, emitter-base voltage of 5.0 V, and power dissipation of 625 mW. The gain (hFE) at VCE=1.0 V and IC=100 mA ranges from 160 to 400. The device has an operating and storage junction temperature range of -65 to +150°C, thermal resistance junction-to-ambient of 200 °C/W, and transition frequency of 210 MHz. The TO-92 case has leads arranged as collector, base, emitter.

Datasheet Summary
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The BC337-25 TRE is an NPN silicon transistor in a TO-92 package for general-purpose amplifier and switching applications, with a continuous collector current of 800 mA, collector-emitter voltage of 45 V, collector-base voltage of 50 V, emitter-base voltage of 5.0 V, and power dissipation of 625 mW. The gain (hFE) at VCE=1.0 V and IC=100 mA ranges from 160 to 400. The device has an operating and storage junction temperature range of -65 to +150°C, thermal resistance junction-to-ambient of 200 °C/W, and transition frequency of 210 MHz. The TO-92 case has leads arranged as collector, base, emitter.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC337-25 TRE
Bipolar Transistors - BJT BC337-25 TRE
Bipolar Transistors - BJT 50Vcbo 45Vceo NPN 5.0Vebo 800mA 625mW

Bipolar Transistors - BJT 50Vcbo 45Vceo NPN 5.0Vebo 800mA 625mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC337-25 TRE
Product Name Bipolar Transistors - BJT
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