Central Semiconductor Corp. Single Bipolar Transistors BC212A APM TIN/LEAD

The BC212A is a silicon PNP transistor designed for low noise, high gain amplifier applications in a TO-92 case. It has a maximum collector-emitter voltage of 50 V, a continuous collector current of 200 mA, and a power dissipation of 300 mW. The device exhibits a current gain (hFE) range of 100 to 300 at VCE=5.0 V and IC=2.0 mA, with a transition frequency of 200 MHz. The collector-base voltage is 60 V, emitter-base voltage is 5.0 V, and junction temperature ranges from -65 to +150 °C. Thermal resistance is 416 °C/W. The part includes lead finish options, with TIN/LEAD plating specified in the ordering code.