Central Semiconductor Corp. Bipolar Transistors - BJT BC184B

The BC184B is a silicon NPN transistor designed for low-level, low-noise amplifier applications in a TO-92 package. It has a collector-base voltage rating of 45 V, collector-emitter voltage of 30 V, emitter-base voltage of 6.0 V, and continuous collector current of 200 mA with a power dissipation of 300 mW. The operating and storage junction temperature range is -65 °C to +150 °C. Thermal resistance is 417 °C/W. Current gain (hFE) ranges from 130 to 250 depending on collector current, and transition frequency is 280 MHz. Noise figure is 4.0 dB under specified conditions. The device meets RoHS requirements as indicated by the PBFREE ordering option.