Central Semiconductor Corp. Bipolar Transistors - BJT BC109C

The BC109C is a small signal NPN silicon transistor in a TO-18 case, designed for general purpose amplifier applications. It has a collector-emitter voltage rating of 25 V, a collector-base voltage of 30 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 200 mA with a power dissipation of 600 mW. The current gain (hFE) at VCE=5.0 V and IC=2.0 mA ranges from 420 to 800, and the transition frequency (fT) is 150 MHz. The noise figure is 4.0 dB at VCE=5.0 V, IC=0.2 mA, and f=1.0 kHz. The operating and storage junction temperature range is -65 to +200 °C, and thermal resistance is 175 °C/W.