Central Semiconductor Corp. Bipolar Transistors - BJT BC108B

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Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW
Description
Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW
Datasheet
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The BC108B is a small signal NPN silicon transistor in a TO-18 case, designed for general purpose amplifier applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 25 V, and emitter-base voltage of 5.0 V. The continuous collector current is 200 mA, and power dissipation is 600 mW. The operating and storage junction temperature range is -65 to +200 °C. Current gain (hFE) at VCE=5.0 V and IC=2.0 mA ranges from 200 to 450, with transition frequency (fT) of 150 MHz. The thermal resistance ΘJC is 175 °C/W.

Datasheet Summary
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The BC108B is a small signal NPN silicon transistor in a TO-18 case, designed for general purpose amplifier applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 25 V, and emitter-base voltage of 5.0 V. The continuous collector current is 200 mA, and power dissipation is 600 mW. The operating and storage junction temperature range is -65 to +200 °C. Current gain (hFE) at VCE=5.0 V and IC=2.0 mA ranges from 200 to 450, with transition frequency (fT) of 150 MHz. The thermal resistance ΘJC is 175 °C/W.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC108B
Bipolar Transistors - BJT BC108B
Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW

Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC108B
Product Name Bipolar Transistors - BJT
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