The BAS28 is a dual, isolated, high-speed silicon switching diode in an SOT-143 surface mount package, designed for fast switching applications. Each diode has a continuous reverse voltage rating of 75 V and a peak repetitive reverse voltage of 85 V, with a continuous forward current of 250 mA. The device exhibits a peak forward surge current of up to 4.0 A for a 1.0 μs pulse and dissipates up to 350 mW. Reverse leakage current is 1.0 μA at 75 V and 25°C, increasing to 50 μA at 150°C. Forward voltage is 1.25 V at 150 mA. Recovery time is 6.0 ns under specified test conditions, and junction capacitance is 2.0 pF. The operating and storage junction temperature range is -65°C to +150°C. Thermal resistance is 357 °C/W. The part meets RoHS compliance.
Bipolar Transistors - BJT Dual ISO High Speed 75Vr 85Vrrm 25If
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BAS28 TR |
| Product Name | Bipolar Transistors - BJT |
