Central Semiconductor Corp. Bipolar Transistors - BJT 40347

Description
Bipolar Transistors - BJT NPN Hi-V SW
Description
Bipolar Transistors - BJT NPN Hi-V SW
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NPN bipolar transistor for amplification and switching with a collector-emitter voltage of 40 V, collector-base voltage of 60 V, emitter-base voltage of 7.0 V, continuous collector current of 20 mA, DC current gain of 80 minimum at 20 mA collector current, collector-emitter saturation voltage of 1.00 V at 20 mA collector current, transition frequency of 450 MHz, and TO-39 package.

Datasheet Summary
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NPN bipolar transistor for amplification and switching with a collector-emitter voltage of 40 V, collector-base voltage of 60 V, emitter-base voltage of 7.0 V, continuous collector current of 20 mA, DC current gain of 80 minimum at 20 mA collector current, collector-emitter saturation voltage of 1.00 V at 20 mA collector current, transition frequency of 450 MHz, and TO-39 package.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
40347
Bipolar Transistors - BJT 40347
Bipolar Transistors - BJT NPN Hi-V SW

Bipolar Transistors - BJT NPN Hi-V SW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 40347
Product Name Bipolar Transistors - BJT
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