Central Semiconductor Corp. Bipolar Transistors - BJT 40250

Description
Bipolar Transistors - BJT 50Vcbo 50Vcev 40Vceo 5.0Vebo 29W
Description
Bipolar Transistors - BJT 50Vcbo 50Vcev 40Vceo 5.0Vebo 29W
Datasheet
Datasheet Summary
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The CENTRAL SEMICONDUCTOR 40250 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general purpose amplifier applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 40 V, continuous collector current of 4.0 A, and power dissipation of 29 W. The thermal resistance from junction to case is 6.0 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C.

Datasheet Summary
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The CENTRAL SEMICONDUCTOR 40250 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general purpose amplifier applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 40 V, continuous collector current of 4.0 A, and power dissipation of 29 W. The thermal resistance from junction to case is 6.0 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
40250
Bipolar Transistors - BJT 40250
Bipolar Transistors - BJT 50Vcbo 50Vcev 40Vceo 5.0Vebo 29W

Bipolar Transistors - BJT 50Vcbo 50Vcev 40Vceo 5.0Vebo 29W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 40250
Product Name Bipolar Transistors - BJT
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