Central Semiconductor Corp. Bipolar Transistors - BJT 2N930B

2N930B is an NPN low-noise bipolar transistor in a TO-18 package, designed for low-noise amplification applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 45 V, and a base-emitter voltage rating of 6.0 V. The maximum collector current is 0.01 A at a collector-emitter voltage of 5.0 V, with a current gain (hFE) ranging from 100 to 300 at a collector current of 0.01 A. The noise figure is 3.0 dB, and the transition frequency is 45 MHz. The device is intended for use in sensitive RF and audio circuits requiring minimal noise contribution.