Central Semiconductor Corp. Bipolar Transistors - BJT 2N929A

The 2N929A is a silicon NPN transistor for small signal general purpose amplifier applications, housed in a TO-18 case. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 30 mA. Power dissipation is 500 mW at 25°C ambient temperature, rising to 1.8 W when the case is held at 25°C. The junction operating temperature range is -65 to +175°C. The transistor exhibits a current gain (hFE) ranging from 25 to 350 depending on collector current and temperature, a transition frequency of 45 MHz at 500 μA collector current, and a collector output capacitance of 6.0 pF. Noise figure is 4.0 dB at 10 μA collector current.