Central Semiconductor Corp. Bipolar Transistors - BJT 2N917

Description
Bipolar Transistors - BJT NPN Low Noise
Description
Bipolar Transistors - BJT NPN Low Noise
Datasheet
Datasheet Summary
Powered by GS/AI

The 2N917 is a small signal NPN transistor designed for RF/IF oscillator applications, housed in a TO-72 case. It has a collector-base voltage rating of 30 V, a collector-emitter voltage rating of 15 V, and an emitter-base voltage rating of 3.0 V. The maximum collector current is 10 mA, with a minimum DC current gain (hFE) of 20 at a collector current of 1 mA and a collector-emitter voltage of 3.0 V. The collector-emitter saturation voltage is 0.5 V at 10 mA collector current. The transition frequency is 500 MHz and the output capacitance is 1.7 pF.

Datasheet Summary
Powered by GS/AI

The 2N917 is a small signal NPN transistor designed for RF/IF oscillator applications, housed in a TO-72 case. It has a collector-base voltage rating of 30 V, a collector-emitter voltage rating of 15 V, and an emitter-base voltage rating of 3.0 V. The maximum collector current is 10 mA, with a minimum DC current gain (hFE) of 20 at a collector current of 1 mA and a collector-emitter voltage of 3.0 V. The collector-emitter saturation voltage is 0.5 V at 10 mA collector current. The transition frequency is 500 MHz and the output capacitance is 1.7 pF.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N917
Bipolar Transistors - BJT 2N917
Bipolar Transistors - BJT NPN Low Noise

Bipolar Transistors - BJT NPN Low Noise

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N917
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data