Central Semiconductor Corp. Bipolar Transistors - BJT 2N834A

The 2N834A is an NPN silicon transistor designed for high-speed switching applications, housed in a TO-18 package. It has a collector-base voltage rating of 40 V, collector-emitter voltage of 30 V, emitter-base voltage of 5.0 V, continuous collector current of 200 mA, and power dissipation of 300 mW. The operating and storage junction temperature range is -65°C to +200°C. The current gain (hFE) is 25 at IC=10mA and VCE=1.0V. The transition frequency (fT) is 500 MHz at VCE=20V and IC=10mA. Collector-emitter saturation voltage is 0.25 V at IC=10mA and IB=1.0mA, and base-emitter saturation voltage is 0.90 V under the same conditions. Turn-on and turn-off times are 33 ns and 75 ns respectively, with IC=10mA and specified base currents. Collector-base leakage current is 500 nA at VCB=20V and 25°C.