Central Semiconductor Corp. Bipolar Transistors - BJT 2N718A

2N718A is an NPN silicon transistor designed for amplification and switching applications, housed in a TO-18 case. It has a collector-base voltage rating of 75 V, a collector-emitter voltage rating of 32 V, and a collector current of 150 mA. The DC current gain (hFE) ranges from 40 to 120 at a collector current of 10 mA and collector-emitter voltage of 10 V. The collector-emitter saturation voltage is 1.5 V at 150 mA collector current. The transistor has a collector-off current of 0.01 mA at 60 V, a collector-emitter breakdown voltage of 32 V, and a typical power dissipation of 150 mW. It operates with a base-emitter voltage of 7.0 V and exhibits an output capacitance of 25 pF at 10 V. The transition frequency is 60 MHz. The device meets RoHS standards and is available in lead-free plating options.