Central Semiconductor Corp. Single Bipolar Transistors 2N718A TIN/LEAD

The 2N718A is a NPN silicon transistor designed for amplification and switching applications, housed in a TO-18 metal case. It has a collector-base voltage rating of 75 V, a collector-emitter voltage rating of 32 V, and an emitter-base voltage rating of 7.0 V. The maximum collector current is 150 mA, with a minimum DC current gain (hFE) of 40 at a collector current of 150 mA and a collector-emitter voltage of 10 V. The saturation voltage (VCE(sat)) is 1.5 V at a collector current of 150 mA. The collector-off current (ICBO) is 0.01 mA at a collector-base voltage of 60 V. The collector-base capacitance is 150 pF, and the transition frequency is 25 MHz. This part is specified for operation in standard temperature ranges and is available in tin/lead plating as indicated by the suffix.