Central Semiconductor Corp. Bipolar Transistors - BJT 2N706A

The 2N706A is an NPN silicon transistor in a TO-18 case, designed for saturation switching applications. It has a collector-emitter breakdown voltage of 15 V, a collector-base breakdown voltage of 40 V, and an emitter-base breakdown voltage of 5.0 V. At a collector current of 10 mA and a collector-emitter voltage of 5.0 V, the minimum current gain (hFE) is 60, with a maximum VCE(sat) of 0.3 V. The device has a collector cutoff current of 0.5 mA at 15 V collector-base voltage, a maximum collector-emitter leakage current of 10 mA, and a typical collector capacitance (Cob) of 30 pF. It operates with a transition frequency (fT) of 200 MHz and has turn-on and turn-off times of 40 ns and 75 ns respectively. The part meets RoHS compliance as indicated by the availability of lead-free plating options.