Central Semiconductor Corp. MOSFET 2N7002 BK

Description
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
Description
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
Datasheet
Datasheet Summary
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The 2N7002 is an N-channel enhancement-mode MOSFET in SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 115 mA at 25°C, and a power dissipation of 350 mW. The on-state resistance is 3.7 Ω at 10 V gate-source voltage and 500 mA drain current. It operates across a junction temperature range of -65°C to +150°C with a thermal resistance of 357 °C/W. The device meets RoHS compliance and is marked with code 702.

Datasheet Summary
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The 2N7002 is an N-channel enhancement-mode MOSFET in SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 115 mA at 25°C, and a power dissipation of 350 mW. The on-state resistance is 3.7 Ω at 10 V gate-source voltage and 500 mA drain current. It operates across a junction temperature range of -65°C to +150°C with a thermal resistance of 357 °C/W. The device meets RoHS compliance and is marked with code 702.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs

MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002 BK
Product Name MOSFET
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