Central Semiconductor Corp. Bipolar Transistors - BJT 2N6666

The 2N6666 is a PNP power Darlington transistor in a TO-220 package, rated for a continuous collector current of 8.0 A and a power dissipation of 65 W. It has a collector-emitter breakdown voltage of 40 V, a minimum DC current gain (hFE) of 1,000 at a collector current of 3.0 A, and a saturated collector-emitter voltage of 3.0 V at that current. The transition frequency is 20 MHz. The device is part of a series of Darlington transistors with identical package and thermal ratings across variants.