Central Semiconductor Corp. Bipolar Transistors - BJT 2N657A

The 2N657A is an NPN bipolar junction transistor designed for amplification and switching applications, housed in a TO-39 case. It has a collector-emitter voltage rating of 100 V, a collector-base voltage rating of 100 V, and an emitter-base voltage rating of 6.0 V. The device supports a continuous collector current of 30 mA, with a minimum DC current gain (hFE) of 90 at 10 mA collector current and 2 V collector-emitter voltage. The collector-emitter saturation voltage is 2.00 V at 10 mA collector current. The transition frequency is 200 MHz, and the output capacitance is 50 pF. The turn-on and turn-off times are 50 ns and 20 ns, respectively. The transistor meets RoHS compliance and is available with optional tin/lead or lead-free plating.