Central Semiconductor Corp. Single Bipolar Transistors 2N657A TIN/LEAD

The 2N657A is an NPN silicon transistor in a TO-39 case for amplification and switching applications, with a collector-emitter voltage rating of 100V, collector-base voltage of 100V, and emitter-base voltage of 6.0V. It has a continuous collector current of 10mA, a minimum DC current gain (hFE) of 90 at 10mA collector current and 2.0V collector-emitter voltage, and a collector-emitter saturation voltage of 1.50V at 10mA. The transition frequency is 150MHz, and the collector-base capacitance is 20pF. The device is compliant with RoHS and offers tin/lead plating as an optional finish.