Central Semiconductor Corp. Bipolar Transistors - BJT 2N6551

The 2N6551 is an NPN silicon transistor in a JEDEC TO-39 package, designed for switching and general-purpose applications requiring up to 5.0 A collector current. The TO-39 case has a diameter of 8.51 to 9.40 mm and a height of 6.10 to 6.60 mm. It offers a collector-emitter voltage rating of 60 V, a collector-base voltage of 120 V, and an emitter-base voltage of 6.0 V. With a power dissipation of 1.0 W at 25°C ambient and 5.0 W at 25°C case temperature, it operates from -65°C to +200°C. The transistor has a current gain (hFE) between 40 and 150 at 2.0 V collector-emitter bias and 2.0 A collector current, a saturation voltage of 1.0 V at 5.0 A collector current, and a transition frequency of 70 MHz. Thermal resistance is 35°C/W from junction to case and 175°C/W from junction to ambient.