Central Semiconductor Corp. Bipolar Transistors - BJT 2N6547

The 2N6547 is an NPN silicon power transistor designed for high voltage and high current applications in a TO-3 case. It has a collector-emitter voltage rating of 850 V (VCEV), 450 V (VCEX), and 400 V (VCEO), with a continuous collector current of 15 A and a power dissipation of 175 W. The device supports a peak collector current of 30 A and a continuous base current of 10 A. The collector-emitter saturation voltage is up to 5.0 V at a collector current of 15 A and base current of 3.0 A. The junction temperature range is -65 to +200 °C, with a thermal resistance of 1.0 °C/W. Current gain ranges from 6 to 30 at a collector current of 10 A and collector-emitter voltage of 2.0 V.