Central Semiconductor Corp. Single Bipolar Transistors 2N6519 TRE TIN/LEAD

The 2N6519 is a PNP silicon transistor in a TO-92 package, designed for high voltage driver and amplifier applications. It has a collector-emitter voltage rating of 300 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The device operates with a junction temperature range of -65°C to +150°C. Electrical characteristics include a collector-base leakage current of up to 50 nA at 200 V, a saturated collector-emitter voltage of 0.35 V at 20 mA collector current, and a current gain (hFE) ranging from 40 to 200 at 10 V collector-emitter voltage and 50 mA collector current. The transition frequency is 200 MHz, with collector-base capacitance of 6 pF and emitter-base capacitance of 100 pF. The TO-92 package defines the pinout as emitter, base, collector.