Central Semiconductor Corp. Bipolar Transistors - BJT 2N6518

The 2N6518 is a PNP silicon high voltage transistor in a TO-92 package, designed for driver and amplifier applications. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, and a continuous collector current of 500 mA. Power dissipation is 625 mW. Operating and storage junction temperature ranges from -65°C to +150°C. The emitter-base voltage is rated at 5.0 V. Collector-emitter saturation voltage is 0.35 V at 20 mA collector current and 2.0 mA base current. Current gain (hFE) ranges from 45 to 200 at 10 V collector-emitter voltage and 50 mA collector current. Transition frequency is 200 MHz at 10 mA collector current. Base, collector, and emitter are arranged in TO-92 pinout as pins 2, 3, and 1 respectively.