Central Semiconductor Corp. Bipolar Transistors - BJT 2N6515

The 2N6515 is an NPN silicon high voltage transistor in a TO-92 package, designed for driver and amplifier applications. It has a collector-base and collector-emitter voltage rating of 250 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The emitter-base voltage is 6.0 V, with an operating and storage junction temperature range of -65 to +150 °C. Current gain (hFE) ranges from 35 to 200 depending on collector current. Saturation voltage VCE(sat) is 0.30 V at 10 mA collector current and 1.0 V at 50 mA. Transition frequency is 40 MHz at 10 mA and 20 V. Collector-base capacitance is 6.0 pF at 20 V.