Central Semiconductor Corp. Single Bipolar Transistors 2N6515 TRE TIN/LEAD

The 2N6515 is an NPN silicon transistor in a TO-92 package, designed for high voltage driver and amplifier applications. It has a collector-base voltage rating of 250 V, a collector-emitter voltage rating of 250 V, and a continuous collector current of 500 mA. Power dissipation is rated at 625 mW. The emitter-base voltage is 6.0 V, and the operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 35 to 200 depending on collector current. Saturation voltage VCE(sat) is 0.30 V at 10 mA collector current and 1.0 V at 50 mA. Transition frequency fT is 40 MHz minimum at 10 mA. Collector-base capacitance is 6.0 pF at 20 V reverse bias. The part is marked with its full part number.