Central Semiconductor Corp. Single Bipolar Transistors 2N6515 TRE PBFREE

The 2N6515 is an NPN silicon high voltage transistor in a TO-92 package, designed for driver and amplifier applications. It has a collector-base voltage rating of 250 V, a collector-emitter voltage rating of 250 V, and a continuous collector current of 500 mA. The power dissipation is 625 mW, with an operating and storage junction temperature range of -65 to +150 °C. The device has a typical current gain (hFE) of 35 to 300 at IC=1 mA to 30 mA and VCE=10 V. The saturation voltage VCE(sat) is 0.30 V at IC=10 mA and IB=1.0 mA, and 1.0 V at IC=50 mA and IB=5.0 mA. The transition frequency fT is 40 to 200 MHz at IC=10 mA. The unit is RoHS compliant as indicated by the PBFREE suffix for lead-free plating.