Central Semiconductor Corp. Bipolar Transistors - BJT 2N6490

The 2N6490 is a PNP silicon power transistor in a TO-220 package, designed for general purpose switching and amplifier applications. It has a collector-emitter voltage rating of 60 V, a collector-base voltage of 70 V, and a continuous collector current of 15 A. The power dissipation is 75 W at TC=25°C and 1.8 W at TA=25°C. The thermal resistance is 1.67 °C/W. Operating and storage junction temperature ranges from -65 °C to +150 °C. The collector-emitter saturation voltage is 3.5 V at IC=15 A and IB=5.0 A. The current gain (hFE) is a minimum of 5.0 at IC=15 A and VCE=4.0 V.