Central Semiconductor Corp. Bipolar Transistors - BJT 2N6489

The 2N6489 is a PNP silicon power transistor in a TO-220 package, designed for general purpose switching and amplifier applications. It has a collector-emitter voltage rating of 80 V, a collector-base voltage of 90 V, and can handle a continuous collector current of 15 A. The device dissipates up to 75 W with a junction-to-case thermal resistance of 1.67 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. When saturated at 15 A collector current and 5 A base current, the collector-emitter saturation voltage is rated at 3.5 V. The current gain (hFE) ranges from 5.0 to 150 at 15 A collector current and 4.0 V collector-emitter voltage.