Central Semiconductor Corp. Bipolar Transistors - BJT 2N6488

Description
Bipolar Transistors - BJT 90Vcbo 80Vceo 5.0V 15A 5.0A 75W
Description
Bipolar Transistors - BJT 90Vcbo 80Vceo 5.0V 15A 5.0A 75W
Datasheet
Datasheet Summary
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The 2N6488 is an NPN silicon power transistor in a TO-220 package, designed for general-purpose switching and amplifier applications. It has a collector-base voltage rating of 90 V, a collector-emitter voltage rating of 80 V, and a continuous collector current capacity of 15 A. The device dissipates up to 75 W of power with a thermal resistance of 1.67 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. The transistor meets RoHS compliance, as indicated by the availability of a PBFREE variant in the series. Its DC current gain (hFE) ranges from 20 to 150 at IC = 5.0 A and VCE = 4.0 V.

Datasheet Summary
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The 2N6488 is an NPN silicon power transistor in a TO-220 package, designed for general-purpose switching and amplifier applications. It has a collector-base voltage rating of 90 V, a collector-emitter voltage rating of 80 V, and a continuous collector current capacity of 15 A. The device dissipates up to 75 W of power with a thermal resistance of 1.67 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. The transistor meets RoHS compliance, as indicated by the availability of a PBFREE variant in the series. Its DC current gain (hFE) ranges from 20 to 150 at IC = 5.0 A and VCE = 4.0 V.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6488
Bipolar Transistors - BJT 2N6488
Bipolar Transistors - BJT 90Vcbo 80Vceo 5.0V 15A 5.0A 75W

Bipolar Transistors - BJT 90Vcbo 80Vceo 5.0V 15A 5.0A 75W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6488
Product Name Bipolar Transistors - BJT
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