Central Semiconductor Corp. Bipolar Transistors - BJT 2N6487

The 2N6487 is an NPN silicon power transistor in a TO-220 package, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 70 V, a collector-emitter voltage rating of 60 V, and an emitter-base voltage rating of 5.0 V. The device supports a continuous collector current of 15 A and a power dissipation of 75 W at TC=25°C. Thermal resistance from junction to case is 1.67 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. The transistor is RoHS compliant, as indicated by the PBFREE suffix option for lead-free plating.