Central Semiconductor Corp. Bipolar Transistors - BJT 2N6476

The 2N6476 is a PNP silicon power transistor in a TO-220 package, designed for general purpose amplifier and switching applications. It has a collector-emitter voltage rating of 120 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W. The thermal resistance from junction to case is 3.125 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. The transistor exhibits a collector-emitter saturation voltage of 2.5 V at 4.0 A collector current and 2.0 A base current, with a base-emitter on-voltage of 3.5 V at 4.0 A collector current. Current gain (hFE) is specified as a minimum of 2.0 at 4.0 A collector current. The part complies with AEC-Q200 and RoHS standards.