Central Semiconductor Corp. Bipolar Transistors - BJT 2N6466

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Bipolar Transistors - BJT NPN 4.0A 40W 130Vcbo 120Vceo
Description
Bipolar Transistors - BJT NPN 4.0A 40W 130Vcbo 120Vceo
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2N6466 is an NPN bipolar junction transistor in a TO-66 package with a collector-emitter voltage rating of 120 V, a collector-base voltage rating of 130 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W. It has a minimum DC current gain of 15 at a collector current of 1.5 A and a saturation voltage of 1.2 V at a collector current of 4.0 A. The device operates up to a transition frequency of 5.0 MHz.

Datasheet Summary
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2N6466 is an NPN bipolar junction transistor in a TO-66 package with a collector-emitter voltage rating of 120 V, a collector-base voltage rating of 130 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W. It has a minimum DC current gain of 15 at a collector current of 1.5 A and a saturation voltage of 1.2 V at a collector current of 4.0 A. The device operates up to a transition frequency of 5.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6466
Bipolar Transistors - BJT 2N6466
Bipolar Transistors - BJT NPN 4.0A 40W 130Vcbo 120Vceo

Bipolar Transistors - BJT NPN 4.0A 40W 130Vcbo 120Vceo

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6466
Product Name Bipolar Transistors - BJT
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