Central Semiconductor Corp. Bipolar Transistors - BJT 2N6465

Description
Bipolar Transistors - BJT NPN 4.0A 40W 110Vcbo 100Vceo
Description
Bipolar Transistors - BJT NPN 4.0A 40W 110Vcbo 100Vceo
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NPN bipolar transistor in TO-66 case with 4.0 A collector current, 40 W power dissipation, 110 V collector-base voltage, and 100 V collector-emitter voltage. DC current gain is 15 minimum at 1.5 A collector current and 1.2 V collector-emitter saturation voltage. Transition frequency is 5.0 MHz.

Datasheet Summary
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NPN bipolar transistor in TO-66 case with 4.0 A collector current, 40 W power dissipation, 110 V collector-base voltage, and 100 V collector-emitter voltage. DC current gain is 15 minimum at 1.5 A collector current and 1.2 V collector-emitter saturation voltage. Transition frequency is 5.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6465
Bipolar Transistors - BJT 2N6465
Bipolar Transistors - BJT NPN 4.0A 40W 110Vcbo 100Vceo

Bipolar Transistors - BJT NPN 4.0A 40W 110Vcbo 100Vceo

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6465
Product Name Bipolar Transistors - BJT
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