Central Semiconductor Corp. Single Bipolar Transistors 2N6432 PBFREE

The 2N6432 is a PNP silicon transistor designed for high voltage amplifier applications, housed in a TO-18 package. It has a collector-base voltage rating of 200 V, a collector-emitter voltage rating of 200 V, and a continuous collector current of 500 mA. The power dissipation is 1.8 W at TC=25°C, with a thermal resistance ΘJC of 97.2 °C/W. The junction operating and storage temperature ranges from -65 to +200 °C. The transistor has a transition frequency of 50 MHz at 10 mA collector current and 20 V collector-emitter voltage. The collector-base cutoff current is 250 nA at VCB=200 V. The hFE ranges from 30 to 150 at VCE=10 V and IC=30 mA. This part is offered with a PBFREE plating suffix as specified for lead-free compliance.