Central Semiconductor Corp. Single Bipolar Transistors 2N6431 TIN/LEAD

The 2N6431 is an NPN silicon transistor designed for high voltage amplifier applications, housed in a TO-18 case. It has a collector-emitter voltage rating of 300 V, a continuous collector current of 500 mA, and a power dissipation of 500 mW. The device operates with a junction temperature range of -65 to +200°C and has a thermal resistance of 97.2 °C/W. Its minimum current gain (hFE) is 40 at IC=10 mA and VCE=10 V, with a transition frequency of 200 MHz at IC=10 mA. The saturation voltage is 0.5 V at IC=20 mA and IB=2.0 mA, and collector-base leakage is up to 250 nA at VCB=200 V.