Central Semiconductor Corp. Single Bipolar Transistors 2N6431 PBFREE

NPN silicon transistor designed for high voltage amplifier applications in a TO-18 package. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, a continuous collector current of 500 mA, and a power dissipation of 1.8 W at 25°C case temperature. The transition frequency is up to 200 MHz at 20 V collector-emitter voltage and 10 mA collector current. The collector-base leakage current is 250 nA maximum at 200 V. Operating and storage junction temperature range is -65°C to +200°C. Thermal resistance from junction to case is 97.2 °C/W.